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SCTW40N120G2V | |
|---|---|
DigiKey Part Number | 497-SCTW40N120G2V-ND |
Manufacturer | |
Manufacturer Product Number | SCTW40N120G2V |
Description | SILICON CARBIDE POWER MOSFET 120 |
Manufacturer Standard Lead Time | 32 Weeks |
Customer Reference | |
Detailed Description | N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™ |
Datasheet | Datasheet |
EDA/CAD Models | SCTW40N120G2V Models |
Product Attributes
Type | Description | Select All |
|---|---|---|
Category | ||
Mfr | ||
Series | - | |
Packaging | Tube | |
Part Status | Active | |
FET Type | ||
Technology | ||
Drain to Source Voltage (Vdss) | 1200 V | |
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 18V | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 18V | |
Vgs(th) (Max) @ Id | 4.9V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V | |
Vgs (Max) | +22V, -10V | |
Input Capacitance (Ciss) (Max) @ Vds | 1233 pF @ 800 V | |
FET Feature | - | |
Power Dissipation (Max) | 278W (Tc) | |
Operating Temperature | -55°C ~ 200°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | HiP247™ | |
Package / Case |
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Quantity
All prices are in USD
Tube
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | $12.42000 | $12.42 |
| 30 | $9.68733 | $290.62 |
Tariff Status: Tariff may apply if shipping to the United States. Tariff costs are calculated and will be displayed in the shopping cart.
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