SCTWA60N120G2-4

DigiKey Part Number
497-SCTWA60N120G2-4-ND
Manufacturer
Manufacturer Product Number
SCTWA60N120G2-4
Description
SILICON CARBIDE POWER MOSFET 120
Manufacturer Standard Lead Time
32 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
EDA/CAD Models
SCTWA60N120G2-4 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
94 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1969 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
388W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
0 In Stock
Check Lead Time
Request Stock Notification
All prices are in USD
Tube
QuantityUnit PriceExt Price
1$20.41000$20.41
10$16.29600$162.96
30$15.09500$452.85
120$14.02300$1,682.76
270$13.56422$3,662.34
510$13.27088$6,768.15
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Tariff Status: Tariff may apply if shipping to the United States. Tariff costs are calculated and will be displayed in the shopping cart.