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N-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SPP11N60C3XKSA1

DigiKey Part Number
SPP11N60C3XKSA1-ND
Manufacturer
Manufacturer Part Number
SPP11N60C3XKSA1
Description
MOSFET N-CH 650V 11A TO220-3
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1
Datasheet
 Datasheet
EDA/CAD Models
SPP11N60C3XKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
Base Product Number
Product Questions and Answers

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All prices are in USD
Tube
QuantityUnit PriceExt Price
1$3.30000$3.30
50$1.43820$71.91
100$1.39740$139.74
500$1.21964$609.82
1,000$1.12986$1,129.86
2,000$1.08838$2,176.76
Manufacturer Standard Packaging
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.