TK35N65W,S1F

DigiKey Part Number
TK35N65WS1F-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK35N65W,S1F
Description
MOSFET N-CH 650V 35A TO247
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 35A (Ta) 270W (Tc) Through Hole TO-247
Datasheet
 Datasheet
EDA/CAD Models
TK35N65W,S1F Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
270W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
TK35N65
In-Stock: 5
Can ship immediately
Quantity
All prices are in USD
Tube
QuantityUnit PriceExt Price
1$8.61000$8.61
30$5.04200$151.26
120$4.25875$511.05
510$3.93251$2,005.58
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Tariff Status: Tariff may apply if shipping to the United States. Tariff costs are calculated and will be displayed in the shopping cart.