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N-Channel 500 V 3.1A (Tc) 35W (Tc) Through Hole TO-220-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRFI830GPBF

DigiKey Part Number
IRFI830GPBF-ND
Manufacturer
Vishay Siliconix
Manufacturer Part Number
IRFI830GPBF
Description
MOSFET N-CH 500V 3.1A TO220-3
Customer Reference
Detailed Description
N-Channel 500 V 3.1A (Tc) 35W (Tc) Through Hole TO-220-3
Datasheet
 Datasheet
EDA/CAD Models
IRFI830GPBF Models
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
610 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IRFI830
Product Questions and Answers

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Obsolete
This product is no longer manufactured. View Substitutes
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