SIHB33N60EF-GE3 is out of stock and can be placed on backorder.
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TO-263-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TO-263-3
TO-263-3

SIHB33N60EF-GE3

DigiKey Part Number
SIHB33N60EF-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHB33N60EF-GE3
Description
MOSFET N-CH 600V 33A D2PAK
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 33A (Tc) 278W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Bulk
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
98mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3454 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB33
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Quantity
All prices are in USD
Bulk
QuantityUnit PriceExt Price
1$7.20000$7.20
10$5.21300$52.13
100$3.81530$381.53
500$3.26862$1,634.31
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